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| Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0910 Features * Broadband, Minimum Ripple Cascadable 50 Gain Block * 8.0 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz * 3 dB Bandwidth: 0.1 to 6.0 GHz * Low VSWR: 1.5:1 from 0.1 to 4.0 GHz * 11.5 dBm Typical P1dB at 1.0 GHz * Hermetic Gold-ceramic Microstrip Package Description The MSA-0910 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for very wide bandwidth industrial and military applications that require flat gain and low VSWR. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 100 mil Package Typical Biasing Configuration R bias VCC > 12 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9551E 6-434 MSA-0910 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 145C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 6.9 mW/C for TC > 91C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 35 mA, ZO = 50 Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 1.0 to 4.0 GHz f = 1.0 to 4.0 GHz f = 1.0 GHz f = 4.0 GHz f = 1.0 GHz f = 4.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 4.0 GHz Units dB dB GHz Min. 7.0 Typ. 8.0 0.2 6.0 1.3:1 1.5:1 Max. 9.0 0.5 dB dBm dBm psec V mV/C 7.0 6.0 6.5 11.5 6.5 23.0 100 7.8 -16.0 8.6 Notes: 1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz gain (G P). 6-435 MSA-0910 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 35 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.02 0.05 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 .31 .18 .12 .10 .10 .10 .10 .10 .10 .09 .07 .04 .06 .12 .19 .26 .32 .38 .43 -108 -114 -141 -166 170 156 145 133 111 88 89 90 145 152 142 131 120 109 99 10.6 8.8 8.1 7.9 7.8 7.8 7.8 7.8 7.9 8.0 8.2 8.2 8.2 8.0 7.5 6.9 6.2 5.3 4.4 3.38 2.75 2.53 2.47 2.46 2.45 2.46 2.46 2.49 2.51 2.58 2.58 2.57 2.50 2.38 2.21 2.04 1.84 1.65 150 160 166 167 163 157 151 144 127 110 96 78 59 40 22 4 -12 -27 -42 -13.8 -13.5 -13.4 -13.4 -13.3 -13.3 -13.3 -13.3 -13.2 -13.0 -12.8 -12.8 -12.7 -12.7 -13.0 -13.5 -14.1 -14.8 -15.6 .202 .212 .214 .215 .215 .216 .216 .217 .220 .224 .230 .230 .233 .230 .223 .211 .198 .181 .167 16 8 3 1 -1 -3 -4 -6 -10 -13 -16 -21 -27 -33 -40 -47 -52 -56 -59 .31 .20 .14 .13 .12 .13 .13 .14 .16 .18 .21 .20 .19 .16 .13 .09 .07 .13 .21 -107 -117 -139 -157 -165 -167 -168 -169 -173 177 167 151 137 125 116 118 160 -173 -172 0.85 1.06 1.16 1.19 1.20 1.20 1.19 1.19 1.17 1.15 1.11 1.11 1.11 1.12 1.16 1.22 1.28 1.38 1.46 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 12 10 8 50 TC = +125C TC = +25C 40 T = -55C C 30 6 4 2 0 .05 10 0 0.1 0.3 0.5 1.0 3.0 6.0 0 2 4 6 Vd (V) 8 10 FREQUENCY (GHz) 5 6.0 GHz 9 0.1 GHz 8 7 1.0 GHz, 1.0 GHz, 4.0 GHz 4.0 GHz G p (dB) 20 Gp (dB) Id (mA) 6 4 10 20 30 40 I d (mA) 50 Figure 1. Typical Power Gain vs. Frequency, Id = 35 mA. P1 dB (dBm) 13 12 11 P1 dB Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. 15 I d = 45 mA 7.0 13 6.5 P1 dB (dBm) 9 8 GP 7 NF 7 Gp (dB) 11 NF (dB) I d = 35 mA 6.0 I d = 45 mA I d = 35 mA I d = 25 mA 5.0 9 5.5 7 I d = 25 mA NF (dB) 6 5 4 -55 -25 +25 +85 +125 5 0.1 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 TEMPERATURE (C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 35 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-436 100 mil Package Dimensions Outline 10A .040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3 2 GROUND .004 .002 .10 .05 .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .495 .030 12.57 .76 .030 .76 6-437 |
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